PART |
Description |
Maker |
GS74116A GS74116ATP-10 GS74116AJ-12I GS74116AJ-12I |
256K X 16 STANDARD SRAM, 7 ns, PDSO44 256K x 16 4Mb Asynchronous SRAM 256K × 16 4Mb的异步SRAM RES, MTF 20K 1/4W 2% ER 16C 16#16 SKT PLUG ER 13C 3#8 3#12 7#16 SKT PLUG 10ns 256K X 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 7 ns, PBGA48
|
SRAM Electronic Theatre Controls, Inc. GSI[GSI Technology] N.A. ETC
|
GS880F36T-11I GS880F36T-14I GS880F32T-12 GS880F36T |
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc. http://
|
GS72108AJ-7I GS72108AGP-12I GS72108AGP-7 GS72108AJ |
256K x 8 2Mb Asynchronous SRAM 256K × 8Mb异步SRAM
|
Electronic Theatre Controls, Inc.
|
N08L163WC2CZ1-55IL N08L163WC2C N08L163WC2CZ1 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
N08L1618C2AB2 N08L1618C2A N08L1618C2AB |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
N08L63W2A |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
|
ON Semiconductor
|
N08L63W2AB27I N08L63W2AB27IT N08L63W2AB7I N08L63W2 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16 bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
|
ON Semiconductor
|
IS61LV25616AL IS61LV25616AL-10B IS61LV25616AL-10BI |
20 AMP MINIATURE PC BOARD RELAY 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
ISSI[Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc] Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
|
M68AW256ML70ZB6 M68AW256ML55ND1 M68AW256ML55ND1E M |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM 256K X 16 STANDARD SRAM, 55 ns, PDSO44 256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
MCM6343 MCM6343TS12 MCM6343TS15 MCM6343YJ12 MCM634 |
256K x 15 Bit 3.3 V Asynchronous Fast Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44 256K x 15 Bit 3.3 V Asynchronous Fast Static RAM 256K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit 8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48 8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
|
M68AW256DL70ZB6T M68AW256DL70ZB1T M68AW256DL55ND1T |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM 4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位256K × 16.0V异步SRAM
|
意法半导 STMicroelectronics N.V.
|